技術名稱

石墨烯輔助之化學成核鑽石方法及所合成之鑽石薄膜及鑽石石墨烯複合物

技術摘要

現今化學氣相沈積鑽石技術先需要依賴佈植鑽石晶種或外加偏壓的電漿輔助化學氣相沈積法形成礸石核再促使鑽石核成長為較大的鑽石顆粒。本發明是二、三十年來重要的技術突破。不需以上兩種物理成核機制，就可以依化學方法産生鑚石。

現有技術描述

1. Diamond seeding uses already synthesized diamond particles as the seed to grow larger diamond grains.
2. Bias enhanced nucleation method requires the application of biasing voltage to accelerate position ions from the CVD plasma to bombard the substrate for the nucleation of diamond.

現有技術問題及其缺陷描述

1. Uniform seeding of diamond particles on large area or non-planar substrate is difficult and expensive.
2. Bias enhanced nucleation does not apply to substrate area where ion bombardment is not effective and does not apply to reactors which do not have such function.

本技術發明目的、所欲解決之問題、能提昇的功效

1. Diamond seeding is not needed any more.
2. Externally appling a biasing voltage is not needed any more.
3. Diamond deposition on a wide variety of materials and geometry is enabled.

適用產業類別

精密機械業、半導體業、化工業

聯絡窗口

單位名稱：技轉育成中心

聯絡人：林意茵

電話：06-2360524轉111

電子郵件：ainlin@mail.ncku.edu.tw